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Pd/Au/SiC Nanostructured Diodes for Nanoelectronics: Room Temperature Electrical Properties

2010

Pd/Au/SiC nanostructured Schottky diodes were fabricated embedding Au nanoparticles (NPs) at the metalsemiconductor interface of macroscopic Pd/SiC contacts. The Au NPs mean size was varied controlling the temperature and time of opportune annealing processes. The electrical characteristics of the nanostructured diodes were studied as a function of the NPs mean size. In particular, using the standard theory of thermoionic emission, we obtained the effective Schottky barrier height (SBH) and the effective ideality factor observing their dependence on the annealing time and temperature being the signature of their dependence on the mean NP size. Furthermore, plotting the effective SBH as a fu…

SiCMaterials scienceAnnealing (metallurgy)Schottky barrierNanoparticleSettore ING-INF/01 - Elettronicabarrier heightSettore FIS/03 - Fisica Della Materiachemistry.chemical_compoundSilicon carbidePdSchottky diodeAuAu nanoparticles (NPs)Electrical and Electronic EngineeringDiodeNanoscale diodebusiness.industrySchottky diodeNanoscale diode; Au; SiCComputer Science Applications1707 Computer Vision and Pattern RecognitionElectrical contactsComputer Science ApplicationschemistryNanoelectronicsOptoelectronicsbusiness
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